【作者】 王雅欣；

【导师】 李养贤；

【作者基本信息】 河北工业大学 ， 材料物理与化学， 2004， 硕士

【摘要】 本文采用中频脉冲磁控溅射法，通过优化ZnO：Al薄膜的制备工艺，如靶电压、本底真空度、工作气压、衬底温度、O₂／Ar，得到可用于硅薄膜太阳能电池背电极的ZnO：Al薄膜。通过膜厚、薄膜电阻率、霍尔迁移率、载流子浓度、光透过率、光反射率、薄膜成分、XRD测量，分析薄膜性能，得到最佳的工艺参数：O₂／Ar受沉积速率的影响随各参数变化而变化无固定值，靶电压265V，温度140℃，本底真空度要尽量大，工作气压0.6Pa。 为了优化硅薄膜电池ZnO：Al／Al背反射电极的增反效果，通过理论计算和实验分析，得到反射效果最佳时的膜厚是1000。与背电极紧密接触的n—Si中，n—μc—Si的耐轰击能力较强，与背反射电极的匹配较好，所以在非晶硅电池上应用n—μc—Si可以提高背反射电极的增反效果。 在硅薄膜电池的ZnO：Al／Al背反射电极应用方面，通过减小靶电压、适当增加靶距和基片的运行速度来减小对电池的轰击，改善电池性能，通过优化实验条件，使电池的短路电流提升了3.7mA／cm²，效率增加了2％，稳定性得到改善。更多还原

【Abstract】 In the work, mid-frequency pulse magnetron sputtering is used to prepare ZnOrAl thin films used as the back reflector of the thin silicon films solar cells. The best techological condition was obtained by optimizing the preparing conditions, (VAr is decided by the deposition rate, target voltage:265V, gas pressure:0.6Pa, the high base vacuum is expected.For the sake of the best reflectivity, the optimized ZnO:Al film thickness of 1000A was achieved by theories calculation and exprimental analysis. The n- c-Si, which could endure the grain bombard, was used as n-layer of the solar cell with ZnOrAl/Al back reflector well.Many measures were adopted to decrease bombard in order to improve the solar cells propertivity, such as decreasing target voltage, increasing target distance, accelerating the movement of the substrate. By optimizing the experimental conditions, short-circuit current was increased by 3.7mA/cm2, the conversion efficiency was increased by 2%, the stability was improved.更多还原