【作者】 宋永梁；

【导师】 季振国；

【作者基本信息】 浙江大学 ， 材料物理化学， 2004， 硕士

【摘要】 氧化锌是一种Ⅱ-Ⅵ族宽禁带氧化物半导体材料。传统上，ZnO薄膜被广泛应用于声表面波器件、体声波器件、气敏传感器、压敏电阻、透明电极、紫外探测器等领域。近年来，ZnO作为宽禁带半导体光电材料的研究越来越受到人们的重视。ZnO薄膜具有多项优点，如生长温度低，激子结合能高，受激辐射阀值低等。利用Mg_xZn_1-xO薄膜，可以在保持ZnO六方纤锌矿（WurtZite）结构的同时有效调节调节薄膜的禁带宽度，制备出基于氧化锌的量子阱、超晶格及相关的光电器件，如基于氧化锌的紫外光探测器、紫外发光二极管和紫外激光二极管等光电子器件。 本论文综述了ZnO薄膜的各种生长技术及其原理，并概括了氧化锌薄膜研究的最新进展。利用溶胶凝胶法成功地在石英玻璃和单晶硅片等衬底上制备出了c轴择优取向的ZnO薄膜，并利用X射线衍射仪、紫外-可见光光谱仪、荧光光谱仪等对ZnO薄膜的结构和性能进行了测试、分析，并研究了热处理参数等条件对ZnO薄膜性能的影响。 利用Mg_xZn_1-xO薄膜成功实现了ZnO薄膜禁带宽度的调节，研究了Mg_xZn_1-xO薄膜的结构和光学禁带宽度以及光致发光性能与Mg²⁺离子含量之间的关系。同时研究了热处理温度对Mg_xZn_1-xO薄膜性能的影响并得到了最佳热处理温度。更多还原

【Abstract】 ZnO is a direct wide band-gap II-VI semiconductor material. Traditionally, ZnO is used as surface acoustic wave devices (SAW), bulk acoustic devices (BAW), gas sensors, varistors, transparent electrodes, UV-detectors, and etc. In recent years, ZnO has gained more and more attention as a wide band semiconductor. Compared to other wildly studied wide band semiconductors. ZnO is promising: high-quality ZnO with very low defect densities can be synthesized at much lower temperature; ZnO can emits light with shorter wavelength than blue light emission from GaN; ZnO has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature; by alloying with MgO, tuning of the band gap while keeping the ZnO hexagonal structure can be achieved by forming MgxZn1-xO. As we know, band gap tuning is important to produce efficient and lasting light emitting diodes (LED) and other electronic devices.In this paper, the various growth techniques of ZnO films and the progresses in the research of ZnO were reviewed. And then, ZnO thin films were synthesize on quartz and silicon substrates by sol-gel dip-coating and spin-coating. The properties of the films and the effects of growth parameters on the quality of ZnO films were studied using X-ray diffraction, optical absorption, photoluminescence techniques, etc.To modify the energy gap of the ZnO, Mg2+ was added in the sol-gel solution, and MgxZn1-xO films were prepared by the same method as that for ZnO films. The effects of Mg content (x), and the annealing parameters on the properties of MgxZn1-xO films were also investigated.更多还原