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真空微电子压力传感器的研究

Study on Vacuum Microelectronic Pressure Sensor

【作者】 徐世六

【导师】 温志渝; 冯兆兰;

【作者基本信息】 重庆大学 , 仪器仪表工程, 2003, 硕士

【摘要】 压力是过程自动化五大参量中的首要参量,作为压力信息获取的核心元件的压力传感器,在石油、化工、冶炼、电力、仪器仪表、机械、汽车、智能结构、航空航天、国防等领域中是必不可少、量大面广的基础元件,它已经成为现代信息技术的重要组成部分,在当代科技领域中占有十分重要的地位。特别是自从80年代末微型电子机械系统(MEMS)技术的崛起,从根本上改变了许多传统压力传感器的设计思想和制造方法,为压力传感器的微型化、集成化、智能化的研究提供了新的技术基础。现在,世界各国已将探索集成化、新原理、新结构、新功能、高性能的压力传感器及系统作为研究开发压力传感器的重点。 本文在重庆市科技“十五”项目的资助下,提出利用微电子技术、MEMS技术和真空电子技术相结合的方法,研究一种带过保护功能的真空微电子压力传感器,该压力传感器由带过保护的场致发射阴极锥尖阵列、弹性阳极膜、绝缘层、真空微腔所构成,具有温度稳定性好、抗辐射、快响应、高灵敏、体积小、二次仪表简单、可批量生产等优点,具有广泛的应用市场。 本论文的主要研究工作如下: 1、在查阅了国内外大量文献资料的基础上,对各种压力传感器的结构、制造方法、研究现状和发展趋势作了深入细致地总结分析。 2、研究了真空微电子压力传感器的相关基础理论,从理论上分析了半导体场致发射电流与半导体功函数及其与温度的关系。 3、研究了真空微电子压力传感器的力学和电学特性、传感器结构及相应的计算与模拟。 4、提出和完成了自保护功能的真空微电子压力传感器的结构设计。 5、进行了传感器的工艺设计和工艺研究,成功地研制出了传感器实验样品。其场致发射阴极锥尖阵列密度达24000个/mm~2,起始发射电压为1~5V,反向电压25V,当正向电压为5V时,单尖发射电流为0.2nA,压力灵敏度为98.5mV/bar。 6、进行了传感器的测试和标定技术研究,并对测试结果进行了分析和讨论。

【Abstract】 Pressure is the most important parameter in the five-parameter in autocontrol procedure. As the pressure information-acquiring device; the pressure sensor is the necessary device being used in the field of oil industry, chemical industry, metallurgical industry, electrical power industry, instruments and meters industry, automobile industry, smart structure, aerospace, defense. And its quantity is greatly demanded. It is one of the important parts of the modern information technology. With the development of Micro-Electro-Mechanical-Systems (MEMS) from the end of 80s in last century, the basic idea of designing and fabricating pressure sensors has changed greatly. These changes pave the way to realizing micromation, integration and intelligence of pressure sensors. And the MEMS technology provides new measurement in the design and fabrication. The worldwide research on pressure sensors focuses on integration, new principle, new structure, new function and high performance.Our research is supported by the Fifteen-Project of Chongqing municipality. In the paper, we put forward the combination of micro electronic technology, MEMS technology and vacuum micro electronic technology to develop a micro electronic pressure sensor with overload protection. The pressure sensor consists.of elastic anode membrane, isolation layer, vacuum micro cavity and field emission catelectrode tip array with overload protection. Such pressure sensor has many advantages, such as high temperature stability, radiation resistance, fast response, high sensitivity, small volume, simple secondary instruments and bulk production. ;The research items are listed as bellow.1. The structures and fabrication technology of different pressure sensors are analyzed after carefully studying the relevant documents.2. After studying the relevant basic theories, the relationship between the field emission current and the work function of semiconductor and the temperature is analyzed.3. The mechanical property and electricity property of the vacuum micro electronic pressure sensor is studied and relevant computation and simulation are carried out.4. The design of overload protection is put forward in the vacuum micro electronic pressure senor.5. Study is carried out to develop the relevant technology design and technology research. A prototype of such sensor is fabricated. The density of its field emission catelectrode tip is about 24000tip/mm2, the onset emission voltage is 0.5 ~ IV, the backward voltage is larger than 25V, the current of single tip is 0.2nA, the sensitivity is 98.5mV/bar. 6. The testing and calibrating method is studied and the testing result is analyzed.

【关键词】 真空微电子压力传感器场致发射MEMS
【Key words】 Micro electronicPressure sensorField emissionMEMS
  • 【网络出版投稿人】 重庆大学
  • 【网络出版年期】2004年 03期
  • 【分类号】TP212
  • 【被引频次】3
  • 【下载频次】365
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