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多晶硅高温压力传感器设计

Design for High-temperature Polysilicon Pressure Sensors

【作者】 徐淑霞

【导师】 程桂芬;

【作者基本信息】 沈阳工业大学 , 电气工程, 2003, 硕士

【摘要】 本论文的研究属于电气工业控制用微电子控制元件压力传感器制造技术领域。内容分为三个部分:第一部分为绪论,对高温压力传感器制造技术的发展进行综述,将该技术领域近十几年的主要研究成果归纳为四类,分析了各自的特点和发展趋势。第二部分为多晶硅高温压力传感器设计技术的研究。第三部分给出了研制结果。 在第二部分首先讨论了多晶硅压力传感器相关基础理论,分析了多晶硅的压阻效应和各种力学结构敏感膜片的应力变化对传感器输出灵敏度的影响,针对多晶硅薄膜只能利用纵向应变的特点,为提高灵敏度,将微压传感器的设计思路应用于设计中,提出了一种新型敏感膜片结构——双硬心纵向应变力学结构传感器设计方案。在理论分析的基础上,详细介绍了每个参数的设计过程,设计了传感器芯片光刻版图。并根据实际工艺条件和实践经验,提出了一套完整的制造工艺方案。在设计中尽可能采用先进的加工工艺,并对关键制造工艺之一的微机械加工工艺做了重大的调整和改进,在各向异性腐蚀中,用LPCVD生长的Si3N4薄膜替代传统的SiO2掩膜,保证了产品的性能达到预期指标。 初样测试结果表明,在1mA恒流源激励下,传感器芯片的灵敏度达到70mV/100Kpa以上,线性度优于0.10%FS,高于矩形膜片的灵敏度输出,并且具有10倍以上的过载保护功能,从而证明了设计思路是正确的,工艺设计是合理可行的。

【Abstract】 The study presented in this thesis is on manufaching technology of pressure sensors for electrical control. The thesis consists of three parts.Part One (introduction to Chapter 1)gives an overall review on the research and development in the related fields.Part Two (Chapter 2) focuses on the sdudy of a design technique for high-temperature polysilicon pressure sensors. Part Three (conclusion)discuss the result of measurement of sensors.In part Two,firstly, the principles of polysilicon pressure sensors are discussed .Analysis was made what the affect to the sensitivity of sensors with the piezoresistive effect of polysilicon and the stress of mechanical structures of sensing diaphragms. For improve the sensitivity of sensors, A novel diaphragm structure with double-bossed and the longitudinal piezoresistance coefficients of polysilicon is discovered .Secondly the procedure of parameters design are described detailly. Based on,the photosensitive masks of sensor chip are designed. In the project ,take the Si3N4 film of LPCVD instead of Si02 in the anisotropic etching technology .which ensured the performance of sensors to meet the needs of applications for electrical controls.The devices are fabricated by IC processes and the MEMS technology,the sensitivity of the sensors is measured to be 70mV/100Kpa under a driving of lmAdc,the linearity best then 0.10%FS. The overload capability over 10 times. The results proved the design project is advanced.

【关键词】 多晶硅高温压力传感器
【Key words】 PolysiliconHigh-temperaturePressuresensors
  • 【分类号】TP212
  • 【被引频次】4
  • 【下载频次】474
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