【作者】 乔保卫；

【导师】 刘正堂；

【作者基本信息】 西北工业大学 ， 材料学， 2003， 硕士

【摘要】 金刚石具有高红外透过率、低吸收系数、抗热冲击性好、耐磨擦等一系列优异的性能，是制造高速飞行器红外窗口和头罩的理想材料。然而金刚石在750℃以上时很容易发生氧化，导致透过率急剧下降。因此在金刚石表面镀制抗氧化增透涂层就成为满足其在高速、高温下应用的关键技术。氮化铝(AlN)具有优良的物理、化学性能，并且与金刚石附着良好。在国外，AlN用作金刚石抗氧化涂层的研究已经展开，并取得进展；而在国内，有关AlN光学保护涂层的研究还未见报道。本文主要研究了氮化铝薄膜的制备工艺及其对薄膜结构、性能的影响规律，为将氮化铝用作金刚石的抗氧化涂层奠定了基础。主要研究成果如下： 利用OPFCAD软件在金刚石衬底上设计了AlN增透保护膜系，并对所设计的膜系进行了结构敏感因子(n,d)及结构偏差分析。金刚石衬底双面镀AlN膜系，在8～11.5μm波段的平均透过率大于85％，可满足导弹头罩设计和使用的要求。 在BMS450型磁控溅射镀膜机上优化出了制备AlN薄膜的工艺参数范围，并揭示了气体流量、射频功率、靶基距、衬底温度、溅射气压等参数对薄膜沉积速率的影响规律。正交试验设计结果表明射频功率对沉积速率的影响是最大的，并且确定了薄膜最大沉积速率的工艺参数。 结合实验结果对靶面的氮化反应进行了理论分析，解释了氮气流量对沉积速率的影响规律。 对所制备的AlN薄膜进行了X射线光电子谱(XPS)、X射线衍射(XRD)及显微硬度分析。由XPS分析结果可知，薄膜中的Al、N元素形成了AlN化合物，表面可能形成了非晶的氧化铝或氧氮化铝薄层。XRD分析结果表明，所制备的AlN薄膜为六角晶型，380℃以下沉积薄膜的结构主要为非晶态，随着衬底温度的升高，薄膜逐渐开始晶化。更多还原

【Abstract】 Diamond has excellent properties such as good transmission in the infrared, low absorption coefficient, high resistance to thermal shock and friction. Diamond is an ideal material for airborne windows and domes for high-speed flight. However, diamond is subject to oxidation in air at temperatures greater than 750℃, and the optical transmission is degraded sharp. In order to meet the need for applications of high-speed or high-temperature, the anti-oxidation and anti-reflective films must be prepared on the diamond surface. Aluminum nitride (A1N) are promising anti-oxidation films with good physical, chemical properties and good adhesion to diamond. Great progress has been made in the researches about A1N anti-oxidation films overseas. But no domestic work has been done on A1N optical and protective films. Researches of the paper mostly concentrate on preparation of A1N films and the functions of experiment parameters on films structure and properties. The main contents and results are listed as follows:With the help of OPFCAD software, anti-reflective films containing A1N on the diamond substrate are designed and analysis of structure sensitive factor and variation are done. After A1N films deposited on the surfaces of diamond, the average transmittance in 8 - 11.4μm waveband can exceed 85%, which can meet the requirements of missile dome in infrared application.A1N films are prepared on silicon substrates by radio frequency magnetron reactive sputtering in order to get the functions of the main experiment parameters such as RF power, gas flow, vacuum gas pressure, target-substrate distance and substrate temperature on deposition rate of films. The optimized parameters ranges are obtained by considering films deposition rate, composition and structure. The orthogonal experiment results prove that the effect of RF power on deposition rate is most significant. The experiment parameters of the biggest deposition rate are decided.On the basis of experiment results, the nitride reaction on target surface as well as the dependence of deposition rate on N2 flow rate is analyzed theoretically.XPS analysis as well as XRD and Vickers hardness is made. XPS results confirm the formation of A1N, and the formation of thin layer of amorphous aluminum oxide or aluminum oxynitrides on films surface is deduced. XRD results show thatdeposited A1N films are hexagonal, and films are amorphous under 380℃ when depositing, films come into crystallizing as the substrate temperature increases.更多还原