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电子封装残余应力及器件热失效的光测实验和数值模拟研究

【作者】 孙建海

【导师】 王卫宁;

【作者基本信息】 首都师范大学 , 光学, 2003, 硕士

【摘要】 电子封装器件在生产的工艺过程中,往往会产生热残余应力以及焊接残余应力,残余应力的释放作用及器件在使用过程中的热变形,会降低集成电路芯片与封装体的结合强度,进而降低集成电路的电性能,反复的热循环,将导致器件的热疲劳失效,严重时可导致硅片或陶瓷片破裂,使整个器件遭到破坏。为降低器件封装的热应力,改善和提高产品的电热性能及可靠性,对集成电路封装的热变形及残余应力进行分析测试是十分重要的和必不可少的。 为了详细研究试件的热变形特征以及残余应力的影响作用,本文在波前干涉理论的基础上,设计了一新型三维光学测试系统,该系统的平面位移测试基于云纹干涉方法,但采用与普通云纹干涉不同的光路系统,利用试件光栅和平面反射镜组形成的两次衍射,使平面位移干涉条纹倍增,测量灵敏度是普通云纹干涉的2倍,系统的离面位移场测试采用泰曼/格林干涉光路。整个系统具有构造新颖、便于调节、位移场条纹对比度高等特点。 本文利用新型三维光学测试系统并结合盲孔释放和有限元数值模拟的方法,对F-1C电子封装试件进行了热变形和残余应力分析,掌握了试件的热变形特征、残余应力的分布规律及其影响作用,找到了试件失效的一些重要原因,为试件的改善提供了理论和实验支持。

【Abstract】 Thermal and welding residual stress often produces in the proceeding of the electronic package, The residual stress release and thermal deformations of the microelectronics will reduce the assemble intensity between the chip and package, and then debase the electrical performance of the assemble circuit, Numerous thermal cycling will lead to thermal fatigue or thermal failure of the microelectronics. In order to reduce the thermal strain, improve the reliability and electrical performance of the Microelectronics, It is important and necessary to test the thermal deformation and the residual stress of the assemble circuit.In order to study the thermal performance and residual stress ofmicroelectronic subassembly, In this paper, a newly optical interferometry methodfor 3-D displacement measurement is developed based on wavefront interference theory. In which the moire Interferometry provide the in-plane displacement, But the system is different from the conventional interferometry, The system applies the double diffraction of the specimen grating, The in-plane displacement sensitivity is a factor of 2 higher than that of the conventional moire Interferometer. Twyman/Green Interferometry method for out-of-plane displacement measurement is adapted , The advantages of the optical set-up are structure novelty, and the fringe patterns of the displacement fields shown high contrast and spatial resolution.In this paper, A novel whole-field residual stress measurement technique is developed using Three-Dimensional Moire Interferometer and hole-drilling method coupled with Finite element Method. The technique is successfully applied to thermal deformation and residual stress measurement in F-1C, In these measurements, the thermal strain is achieved and the whole-field residual stress distribution, including the possible stress concentration, is obtained. From these measurements, We can see the thermal strain and residual stress plays a significant role in the mechanical performance of a structure and its structural integrity. Providing the important theory and experimental data for improving the F-1C.

  • 【分类号】TN307;O348.1
  • 【被引频次】2
  • 【下载频次】333
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