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光注入全内反射型光开关的研究

Study of Photon-Injected Total Internal Reflection Optical Switch

【作者】 占恒正

【导师】 江晓清;

【作者基本信息】 浙江大学 , 微电子学与固体电子学, 2003, 硕士

【摘要】 随着光网络和光通讯的发展,以及光交换概念的提出,光开关及开关列阵起着越来越重要的地位,同时对光开关性能要求也越来越高。传统的MEMS光开关、热光开光、液晶光开光的开关速度都为ms量级,基本上达不到光交换的要求,而传统的电光开光有着很高的偏振敏感性,同样很难达到光交换的要求。光控制光开关的开光速度可以达到ps量级,并且对偏振的敏感性不高,通过对开光结构的设计和优化,其性能指标也可以达到实用要求,因此对光控制光开光的研究具有实际的理论意义和应用价值。本论文首先阐述了光控制光开光的原理、光生载流子的模型,以及光生载流子影响折射率变化的模型,分析了三维波导的结构对传输光波的影响。从理论上分析了展宽型多模波导对非对称Y分叉结构的光开关的性能的改善,提出一种设计展宽型Y分叉全内反射光开关反射区宽度的近似计算方法。然后用FD-BPM对展宽型Y分叉全内反射光开关进行模拟和分析,设计了全内反射型非对称Y分叉光开关。在展宽型Y分叉的基础上,提出了隔离型非对称Y分叉全内反射结构,通过对隔离型非对称Y分叉的结构参数的分析,在理论上可以设计出消光比达到40dB以上的全内反射型光开光。采用反刻法和剥离法,完成了光注入非对称Y分叉结构的脊型GaAs光控制光开关制作。利用红外摄像机采集的光开关输出的近场分布,采用对场光场能量高斯拟合的近似方法,测得该关注入光开关的直通端的消光比可以达到8dB,而反射端的消光比则至少可以达到18dB以上。器件的指标的精确测量则需要在芯片封装完成后作进一步的测量。

【Abstract】 With development of optical network and optical communication,and the introduction of conception of optical swap,optical switch and optical switch array is playing an important role.The speed of traditional MEMS optical switch,heat optical switch,liquid crystal optical switch is several ms,which cannot catch up with the demand of optical swap. The electronic-optical switch is sensitive to polarization,so it is hard to satisfy the demand of optical swap. But the speed of photon induced optical switch can be several ps,and it is independent to polarization. With the optimization of its structure,its performance can be applicable. So study of photon induced optical switch has science research value and application value.’In this thesis,we described the principle of photon modulation,the model of photon induced careers and the model of carrier-induced index change. We analyzed the effect of 3-D structure of waveguide to the lightwave in the waveguide. At the same time we analyzed the effect of enlarged waveguide to the improvement of asymmetrical Y-branch optical switch performance. We simulated and analyzed Y-branch TIR optical switch with enlarged waveguide with FD-BPM. Based on the enlarged waveguide Y-branch,we introduced the sheared Y-branch TIR structure. After analyzing the structure parameters of the sheared asymmetricalY-branch,the extinction ratio of the TIR optical switch can be more than 40dB in theory.By wet erode,we finished photon-induce total internal reflection Y branch optical switch with GaAs material. We collect distributing of near-field of optical switch output-port. Using Gaussian curve fit,we measure the extinction ratio of "bar channel" is 8dB,and the extinction ratio of "cross channel" is more than 18dB. The precise measurement of the device performance parameters will be finished after the device is packaged.

  • 【网络出版投稿人】 浙江大学
  • 【网络出版年期】2003年 01期
  • 【分类号】TN253
  • 【被引频次】2
  • 【下载频次】170
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