硅基光接收集成宽带放大器设计

【作者】 王镇道；

【导师】 陈迪平；

【作者基本信息】 湖南大学 ， 微电子学与固体电子学， 2002， 硕士

【摘要】 介绍了限制宽带放大器频带宽度的因素，通过分析MOSFET的本征参数、寄生参数对频率特性的影响，提出了采用短沟器件、使MOSFET工作在饱和区、抬高栅源电压等提高MOSFET特征频率的方法；分析了不同电路组态对放大器频率特性的影响、节点电压对电压模电路、电流模电路频率特性的不同影响，根据应用于双极晶体管电路的跨导线性原理，提出了采用MOSFET构成的电流模放大电路、电流传输电路、输出电路以及由它们所组成的宽带放大器，获得了良好的频率响应。该宽带放大器具有很好的应用前景和广阔的市场空间。更多还原

【Abstract】 The factors limiting the frequency band of the wide-band amplifier are introduced. Through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of MOSFET by using short channel device and making MOSFET work at the saturation region through raising VGS is put forward; The effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. According to the linear theory of transconductance which is applied in the BIT circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of MOSFET and the wide-band amplifier composed of them are put forward. And good frequency response is obtained. Extended applications and huge market are promised.更多还原