【作者】 白晓飞；

【导师】 党智敏；

【作者基本信息】 北京化工大学 ， 材料科学与工程， 2012， 硕士

【摘要】 与传统的分立式电容设计技术相比,埋入式电容技术能够提高封装的有效性,改善元件的电气性能,同时使电子组装成本大大降低，在微电子行业具有重要的作用。电介质材料是埋入式电容的关键部分，其性能的好坏决定着埋入式电容性能的优劣。将具有高介电性能的陶瓷纳米颗粒和聚合物复合，利用陶瓷纳米粒子的高介电性能和聚合物的柔性等优点，利用层压及微电子加工技术，可以制备出性能优异的埋入式电容。本文以具有优良电学性能的聚酰亚胺（PI）和环氧树脂（Epoxy）为基体，以具有高介电常数的无机陶瓷纳米粒子钛酸钡（BaTiO3）为填料，通过层压法及减层法等微电子加工技术，制备了埋入式电容。研究了介电薄膜微观结构及其对介电性能的影响，以及埋入式电容器在常温下及在变温下不同频率的介电性能。结果表明针对不同的聚合物基体，利用层压法和减层法制备的埋入式电容具有优良的介电性能。在100Hz~1MHz的频率范围内，以BT/Epoxy为基体的埋入式电容其介电常数可达到18，介电损耗＜0.02，介电强度为24V/μm，且在-30℃~100℃的温度范围内具有良好的温度稳定性。以BT/PI为基体的埋入式电容其介电常数可达30，介电损耗低于0.05，介电强度为210V/μm，在-50℃~150℃的温度范围内，也具有良好的温度稳定性，实验结果表明，以上两种介电薄膜为基底的埋入式电容能够有效的应用于微电子行业。更多还原

【Abstract】 Compare with the design technology of traditional Discrete capacitors, thetechnology of embedded capacitor can improve the effectiveness of thepackage, enhance electric performance of device and reduce the cost ofelectronics assembly. The technology of embedded capacitor has a importanteffect on microelectronics technology. Dielectric materials are the importantpart of embedded capacitor and the property of dielectric materials decide onthe performance of embedded capacitor. Compound ceramic nanoparticle withpolymer and utilize the advantage of ceramic nanoparticle and polymer, suchas high dielectric constant of ceramic particle and flexibility of polymer, highquality of embedded capacitor can be manufactured using laminated andmicroelectronic technology.In this paper, polyimide and epoxy resin have been chosen as the polymermatrix and BaTiO3nanoparticle as the filler. The embedded capacitors have been prepared through lamination and minus layer method. Microstructure ofdielectric film and the influence of microstructure on dielectric property havebeen studied. The dielectric property of embedded capacitors has been alsostudied at different frequency and temperature. The results show thatembedded capacitors of different polymer matrix have better dielectricproperty prepared through lamination and minus layer method. In thefrequency range of100Hz~1MHz, dielectric constant of embedded capacitorof BT/EP achieve18. dielectric loss＜0.02, dielectric strength is24V/μm. Ithas better temperature stability in the range of-30℃~100℃. The dielectricconstant of embedded capacitor of BT/PI reach30, dielectric loss is below0.05and dielectric strength is210V/μm. It also has better temperature stabilityin the range of-50℃~150℃. Experimental results show that the embeddedcapacitors with BT/EP and BT/PI dielectric films can be effective used inmicroelectronic technology.更多还原