【作者】 杨鹤；

【导师】 刘爱民；

【作者基本信息】 大连理工大学 ， 光学工程， 2012， 硕士

【摘要】 在例如大规模集成电路制造和超大规模集成电路制造等半导体工业中,硅是一种非常重要的原材料。同样,它也被广泛应用在微机电系统和太阳能电池制造中。而金属银作为太阳能电池的正面电极材料和集成电路工业中的连接金属,都有着广泛的应用,所以在硅表面制备金属银薄膜有着重要意义,而电化学沉积技术是一种安全,可控,成本低,容易操作且节约能源环境友好的制备工艺,所以本论文中采用化学和电化学法两步法寻找一种简单易行的在P型硅片表面生长银薄膜的方法。采用两步法制备P型硅表面微米级银薄膜,第一步将硅片置于含AgNO3的HF溶液中,利用在HF环境中Ag+离子能被还原成Ag原子并沉积于硅片表面的特性形成不连续Ag纳米粒子的种子层,第二步用电化学恒电流法将已形成Ag种子层的硅片作为工作电极在含AgNO3和KNO3的溶液中进行电沉积银,生成所需要的银薄膜。分别为硅表面银种子层生长和微米级银膜的形成找寻适合的条件。为分析种子层生长情况和银薄膜的结构,晶粒大小,表面形貌以及薄膜厚度,分别使用X射线衍射谱(XRD),扫描电子显微镜(SEM)进行分析研究,发现第一步中在0.02g/L AgNO3的5%HF的溶液中Ag种子层的沉积情况较好,第二步中在电流为-1.5mA的0.1mol/LAgNO3和0.1mol/LKNO3的溶液中电沉积银3小时成膜情况较好。更多还原

【Abstract】 In such as large scale integrated circuit manufacturing and very large scale integrated circuit manufacturing semiconductor industry, silicon is a very important raw materials. Also, it can be widely used in microelectromechanical system and solar battery manufacturing. And silver as the positive electrode materials of the solar cells and the connection metal in the integrated circuit industry, all has the widespread application, so the preparation of silver thin film on silicon surface has important significance. Electrochemical deposition is a safe, controllable, low cost and easy way to operate and also is a preparation process which is saving energy and environment friendly, so in this thesis using the chemical and electrochemical two-step method to looking for a simple and easy way to make the silver thin film on P type silicon surface.Using the two-step method to fabricate micron-grade silver thin film on P type silicon surface, in the first step silicon substrate was placed in HF solution with AgNO3, in HF environment Ag+ions were reduced to Ag and then deposit on the surface of silicon to form the discontinuous Ag nanoparticles seed layer. In the second step the silicon with Ag seed layer was used as the anode in AgNO3and KNO3solution to electrodeposit silver thin film by electrochemistry constant current method to get the silver thin film which we need. Respectively finding the suitable conditions for the preparation of silver nanoparticles seed layer and micron-grade silver thin film on silicon surface.In order to analyze the structure of silver thin film, the size of crystal particle, surface morphology and the thickness of the film, X-ray diffraction spectrum (XRD) and scanning electron microscopy (SEM) were used separately for study, finding that in the first step the deposition of silver seed layer in0.02g/L AgNO3and5%HF solution was well and in second step the silver thin film performed well at the current of-1.5mA in0.1mol/L AgNO3and0.1mol/L KNO3solution for3hours.更多还原