【作者】 王健；

【导师】 白亦真；

【作者基本信息】 大连理工大学 ， 凝聚态物理， 2011， 硕士

【摘要】 采用射频磁控溅射方法,分别以石墨靶材和甲烷气体作为碳源,通过调控石墨靶功率、基片溅射温度、基片的负偏压,CH4/N2/Ar气体流量比一系列实验参数,在硅基片上沉积非晶B-C-N薄膜。利用傅里叶变换红外光谱(FTIR),原子力显微镜(AFM), X射线衍射(XRD),台阶仪,纳米压痕测试仪等表征手段,分别对B-C-N薄膜的表面形貌粗糙度,成键,沉积速率以及硬度进行分析。主要工作及分析有以下四点：(1)通过红外光谱测试表明,无论是石墨靶还是甲烷气体作为碳源时,沉积的B-C-N薄膜中B、C、N原子都两两成键。说明我们溅射沉积出来的B-C-N薄膜中的原子实现了原子级结合,是化合物而非混合物。通过分析得出结论：当碳源为石墨靶时：增加石墨靶的功率和提高沉积温度都有助于B-C-N薄膜中各种化学键(B-C、C-N、B-N、C=C和C=N)的形成；当碳源为甲烷时：增加甲烷的流量同样有助于B-C、C-N、B-N、C=C和C=N化学键的形成。(2)通过原子力测试表明,我们沉积的B-C-N薄膜表面形貌都比较平整致密,方均根(RMS)粗糙度都相对较小。当碳源为石墨时：随着石墨靶溅射功率或溅射温度的增加,薄膜的致密度和方均根(RMS)粗糙度都越来越好：当碳源为甲烷时也得出同样的结果。(3)通过台阶仪测试表明,当碳源为石墨时：随着溅射功率的增加薄膜的厚度逐渐增加；给基片加负偏压时由于随着偏压的增加,对基片的反溅射作用逐渐增强反而影响了沉积速率。当碳源为甲烷时：随着甲烷流量的增加,薄膜的厚度增加相应的沉积速率也增加;而随着氮气流量的增加,薄膜的厚度先增加后减小。(4)通过纳米压痕测试表明,制备的薄膜硬度比较低,对基片进行研磨预处理并不能改善B-C-N薄膜的硬度。更多还原

【Abstract】 By changing processing parameters, including sputtering power of graphite target, temperature, bias voltage and gas flow rate, amorphous B-C-N thin films were synthesized on silicon substrate via RF magnetron sputtering and Carbon target and CH4 gas were used as sputtering original source, respectively. The structure, morphology, film thickness, and hardness of B-C-N films were measured by FTIR, AFM, XRD, steps instrument and nanoindentation. In this study, our main work is as follows:(1) Whether Carbon target and CH4 gas were used as sputtering original source, FTIR spectra reveal that all these synthesized B-C-N films are atomic-level hybrids composed of B, C and N atoms. Through the analysis conclude, when carbon source is graphite target, various chemical bonds can be enhanced by increasing the sputtering power of graphite target or increasing the substrate temperature; when carbon source is CH4 gas, various chemical bonds can also be enhanced by increasing CH4 flow.(2) FTIR spectra show that all the samples are atomic-level compounds which were composed of B, C and N atoms. From the results, when carbon source is graphite target, chemical bonds enhanced as increasing the sputtering power of graphite target or substrate temperature; when carbon source is CH4 gas, surface morphology of B-C-N thin films become better and better by increasing CH4 flow.(3) Steps instrument curve reveal change rule of film thickness by adjusting a series of experimental parameters when Carbon target and CH4 gas were used as sputtering original source, respectively.(4) The results of nano-indentation tests indicated that the hardness of as-deposited B-C-N thin film has slightly increased, although the deposition substrates have been pretreated for abrasion.更多还原