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用于无线射频识别系统发射机的设计与实现

Design and Implementation of Transmitters for RFID System Applications

【作者】 邓见保

【导师】 张世林;

【作者基本信息】 天津大学 , 微电子学与固体电子学, 2012, 硕士

【摘要】 在新一代信息技术物联网的推动下,无线射频识别(RFID)技术在证照防伪、电子支付、出入控制、仓储管理和物流追踪等领域受到广泛应用。随着RFID技术的发展,超高频(UHF)915MHz和微波(MW)2.45GHz频段的RFID系统相比于低频(LF)和高频(HF)频段RFID系统具有识别距离远、天线尺寸小、识别速度快和防冲突能力强等优点。本文紧扣超高频和微波2.45GHz频段RFID的应用需求,对适用于读写器和标签的发射机进行了深入的研究,完成了以下工作:基于EPC global Class1 Gen2协议标准,设计了一款用于UHF单芯片读写器的低成本发射机芯片。该发射机采用单通道直接上变频结构,包括可对基带信号直接滤波的脉冲整形滤波器(PSF)、非平衡混频器结构的调制器(Modulator)和两级放大结构的功率放大器(PA)。发射机芯片采用1.8V和3.3V双电源供电,DSB-ASK调制方式,最大输出功率达24dBm,全集成整版面积低于2mm~2。基于该发射机,提出了一种直接上变频I/Q正交调制发射机电路的基本设计方法。设计了一种新型的2.45GHz有源标签发射机。该标签发射机采用差分信号操作,包括偏置电路、振荡器和新型功率放大器。偏置电路为开关可控式,可开启和关断发射机。特别是新型功率放大器,结合了PCB天线阻抗设计,使得无需只用片内或片外电感,大大节省了成本。1.8V供电电压下,最大输出功率10dBm,芯片面积680×760μm~2。基于所设计的有源标签发射机结构,文中还提出了一种半有源标签解决方案,该方案对模式控制和功耗等性能进行了优化。最后,本设计采用UMC CMOS 0.18μm 1P6M工艺,对读写器发射机和标签发射机进行了版图设计并流片测试,对测试结果做了相应分析总结。

【Abstract】 Under the impetus of the new generation information technology of Internet of Things, radio frequency identification devices are widely used in the field of certificate security, electronic payment, access control system, warehouse management and logistics tracking. With the development of RFID technology, RFID system in UHF 915MHz and MW 2.45GHz owns its advantages compared with system in LF and HF frequency band, such as long identification distance, small size of antenna, high identification speed and strong anti-collision ability. According to the specific requirements of the UHF and MW 2.45GHz RFID technology applications, this dissertation has following achievements on the transmitters of UHF single-chip reader and active tag:The low cost transmitter for UHF single chip reader applications is proposed, which satisfies the EPC global Class1 Gen2 protocol. The transmitter adopts direct up-conversion architecture, including pulse shaping filter (PSF), unbalanced structure modulator and two stage power amplifier (PA). With the supply of 1.8V and 3.3V, the transmitter shows a maximum output power of 24dBm. The modulation mode is DSB-ASK. The total chip area is less than 2 mm~2. On the basis of the single end transmitter, the design of transmitter with I/Q quadrature modulation up-conversion architecture is also introduced.A novel transmitter for 2.45GHz active RFID tag applications is also designed. The differential transmitter includes bias generator, oscillator and power amplifier. The switch controlled bias generator can turn on or off the transmitter. It is worth to mention the design of novel PA. Associated with the design of PCB antenna, on-chip RF integrated inductors are not applied, which reduces the cost. Under the supply of 1.8V, the maximum output power is 10dBm, whereas the total chip area is only 680×760μm~2. Based on this kind of transmitter, a solution to the semi-active RFID tag is demonstrated. This architecture optimizes the mode control and power consumption.Finally, the layout design is presented and these two transmitters of reader and tag are fabricated in a UMC 0.18μm 1P6M CMOS process. Measurement results are discussed, too.

【关键词】 射频识别发射机CMOS读写器标签
【Key words】 RFIDtransmitterCMOSreadertag
  • 【网络出版投稿人】 天津大学
  • 【网络出版年期】2012年 08期
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