【作者】 任世荣；

【导师】 张存善； 陈新亮；

【作者基本信息】 河北工业大学 ， 物理电子学， 2011， 硕士

【摘要】 本文采用电子束反应蒸发法,选用自制的掺WO₃的In₂O₃陶瓷靶材,制备IWO（In₂O₃:WO₃）透明导电氧化物薄膜。研究WO₃掺杂浓度、衬底温度、氧流量、薄膜厚度、退火处理、SiO₂和Al₂O₃阻挡层以及梯度速率等因素对IWO薄膜结构特性、光学特性和电学特性的影响。在WO₃掺杂浓度为0.35%、衬底温度为350℃、氧流量为35sccm、薄膜厚度为800?（实测为120nm）条件下制备的IWO薄膜的载流子迁移率μ为47.9cm2V-1s-1,载流子浓度n为2.66×1020cm^-3,电阻率ρ为4.89×10-4?cm,400nm-1000nm波长范围光平均透过率为76%（含玻璃衬底）。Ar氛围中500℃退火1h,得到最高载流子迁移率μ为66.2 cm2V-1s-1。一定厚度的SiO₂和Al₂O₃薄膜作为阻挡层,改善了薄膜的电学性能,提高了薄膜的载流子迁移率μ。梯度速率生长方式制备IWO薄膜,得到了质量较好的薄膜:载流子迁移率μ为67.1 cm2V-1s-1,载流子浓度n为1.84×1020cm^-3,最低电阻率ρ为5.05×10-4?cm,而400nm-1100nm波段的平均透过率约为77%（含玻璃衬底）。最后,将常规生长的IWO薄膜应用到有机薄膜太阳电池中,得到电池的转换效率为3.426%。更多还原

【Abstract】 Tungsten doped indium oxide （IWO-In₂O₃:WO₃） thin films were deposited on glass substrates by reactive electron beam deposition technique, using homemade In₂O₃ ceramics targets with WO₃ dopant. The influence of doping concentration, substrate temperature, oxygen flow rate, film thickness, annealing, SiO₂ and Al₂O₃ buffer layer and gradual growth rates on the structural, optical and electrical properties of the IWO films were investigated in detail.The IWO thin films as the deposited by reactive electron beam deposition technique under the conditions of the doping concentration⁰.35%, substrate temperature 350℃, the O₂ flows³5sccm, and the film thickness is 800?（¹20nm）. Typical thin film performances: the mobilityμ⁴7.9cm2V-1s-1 , the carrier concentration n².66×1020cm^-3 and the resistivityρ⁴.89×10-4?cm. The optimizing optical transmittance is ⁷6% （including float glass） at the light wavelength between 400 to 1100 nm. The mobility is improved to 66.2cm2V-1s-1 after annealing at 500℃in an Ar atmosphere. SiO₂ and Al₂O₃ films as buffer layers on glass substrates also can improve the quality of the IWO thin films. The IWO thin films obtained with the gradual growth rates have good thin film quality, with the high mobilityμ⁶7.1cm2V-1s-1,the carrier concentration n¹.84×1020cm^-3 and the low resistivityρ⁵.05×10-4?cm. The optimizing average transmittance is ⁷7% （including float glass substrate） in the light wavelength range from 400nm to 1100 nm.Finally, IWO（In₂O₃:WO₃） thin film was applied in organic thin film solar cell with an efficiency of ³.426%.更多还原