【作者】 上官士鹏；

【导师】 韩建伟；

【作者基本信息】 中国科学院研究生院（空间科学与应用研究中心） ， 空间物理学， 2011， 硕士

【摘要】 数字器件包括SRAM、FLASH、FPGA、ASIC、PROM、EEPROM、CPU等,是构成航天器电子系统的主要部分,实现数据的获取、写入、存储等工作。空间粒子辐射环境容易引发数字器件的单粒子效应,它是导致航天器故障或异常的主要原因之一。在单粒子效应中,单粒子翻转(Single Event Upset, SEU)效应和单粒子闩锁(Single Event Latchup, SEL)效应是对器件影响最多且被广泛关注的两种效应。随着半导体工艺减小到深亚微米、超深亚微米,数字器件表现出对单粒子效应的极端敏感性。为了保障航天器的安全可靠飞行,需要对航天器电子系统中的数字器件进行地面模拟试验以判定单粒子效应特性。本文首先对脉冲激光模拟试验单粒子效应的机理进行了研究,提出激光试验中应该解决的包括等效LET值转换、扫描覆盖性、多位翻转等问题的试验解决思路,同时分析了激光的准确定位的优势在试验中的应用。对所选取的SRAM、ASIC、FPGA三种器件进行了激光单粒子效应试验,测试了翻转阈值、闩锁阈值以及翻转截面,分析了不同的工作状态对单粒子效应现象的影响。以这三种数字器件为基础,进一步试验探讨了扫描覆盖性和多位翻转问题的办法,与重离子试验结果进行了比对以验证有效性。最后,发挥了激光的可准确定位优势,研究了多次闩锁效应、微闩锁效应、以及闩锁效应对翻转效应造成的影响。本文给出了脉冲激光模拟试验单粒子效应存在的多位翻转的修正思路和方法,发挥了激光的可准确定位优势在数字器件测试中的应用,本试验结果对相似类型的数字器件的单粒子效应测试及空间应用有一定借鉴意义。更多还原

【Abstract】 Digital device including SRAM, FLASH, FPGA, ASIC, PROM, EEPROM, CPU and so on are the most important parts of space electronic systems. As a whole part they can easily get, write, save datum. Space particle radiation environment can easily induce single event effects (SEE) so they can damage electronic system. As a result of semiconductor process is reducing into deep-micron, even super deep-micron, digital device are becoming more susceptible to out space environment. Among SEE, single event upset (SEU) and single event latch-up (SEL) are the most common and have been widely researched.To protect safety of space aircrafts, SEE characters of digital device should be researched and simulated on earth. First, this article look into mechanisms of pulsed laser single event effects (PLSEE) facility on SEE and put forward methods of how equal laser energy to LET, then introduce covering and multiple bites upset (MBU) problems of PLSEE and advantages of PLSEE in SEE test. SRAM, FPGA, ASIC have been put into practice of how to solve problems of PLSEE. By testing this device we got their threshold of SEU and SEL, cross section of SEU and their relationships with the configuration datum. Also discuss way of solving problems mentioned above of PLSEE and compare results with heavy ion tests. We learned times of SEL, micro-SEL and SEL’effects on SEU by using advantages of PLSEE.This article solved the problems of PLSEE and made use of its advantages. It has some useful references to SEE test of digital device.更多还原