【作者】 高兵；

【导师】 张希艳；

【作者基本信息】 长春理工大学 ， 材料物理与化学， 2011， 硕士

【摘要】 本文采用高温固相法制备了用于白光LED的Sr3SiO5:Eu2+荧光粉,研究了Sr/Si比、助熔剂BaF2用量、灼烧温度、Eu2+离子掺杂量以及Ge含量(分别为0mol、0.1mol、0.25mol、0.5mol、0.75mol、0.9mol和1 mo1)和Ba含量(分别为0mol、0.1mol、0.15mol、0.2mol、0.25mol、0.3mol、0.35mol、0.4mol、0.45mol和0.5mo1)对样品晶体结构和发光性能的影响,采用XRD和PL测定了样品的物相和光谱。对于Sr3SiO5: Eu2+荧光粉而言,确定了最佳的Sr/Si比为3,BaF2含量为1wt%,烧结温度为1380℃Eu2+离子掺杂浓度为7mo1%,发射峰位于569nm; Sr3Si1-yGeyO5:Eu2+荧光粉的发射光谱峰值位于502nm、550nm、590nm和610nm; Sr3-xBaxSiO5:Eu2+荧光粉的发射光谱范围为566 nm-576nm。在灼烧温度为1360℃～1420℃,N2/H2(90/10)的气氛条件下灼烧6小时,分别制备了纯相的Sr3-xBaxSiO5:荧光粉以及Eu2+ Eu2+荧光粉。该硅酸盐荧光粉的激发光谱是一300 nm～520nm的宽带谱,且在460nm(蓝光)处激发强度均较高,可用于紫外、近紫外和蓝光芯片激发的白光LED器件中。更多还原

【Abstract】 The Sr3SiO5:Eu2+ phosphor for White Light Emitting Diode (WLED) is synthesized by the solid-state reaction method. The crystal structure and luminescent properties are influenced by the factors such as Sr/Si ratio, the doping concentration of the flux BaF2 and Eu2+ ion,the temperature as well as the concentration of Ge (respectively 0 mol,0.1mol,0.25 mol,0.5 mol,0.75 mol,0.9 mol and 1 mol) and Ba (respectively 0 mol,0.1 mol,0.15 mol,0.2 mol%,0.25 mol,0.3 mol,0.35 mol,0.4 mol,0.45 mol and 0.5 mol). And the phase and spectrum are analyzed by XRD and PL. To the Sr3SiO5:Eu2+ phosphor, the optimal results show that the Sr/Si ratio is 3;the doping concentration of BaF2 and Eu2+ ion is lwt% and 7mol%;and the best temperature is 1380℃.The Sr3SiO5:Eu2+ phosphor exhibits a strong yellow emission centering at about 569nm.The emission peaks of the Sr3Si1-yGeyO5:Eu2+ phosphor are 502nm,550nm,590nm and 610nm.While the range of the Sr3-xBaxSiO5:Eu2+ phosphor emission spectrum is 566nm～576nm. Under the temperature of 1360℃～1420℃,the atmosphere of N2/H2(90/10) and 6 hours, pure phases of the Sr3SiO5:Eu2+ and Sr3GeO5:Eu2+ phosphor are synthesized. And the Sr3-xBaxSi05:Eu2+ phosphor is also prepared. The range of the excitation spectrum of this kind of silicate phosphor investigated in this paper is 300nm～520nm with high exciting intensity in 460n (blue light),and it can be widely applied in the WLEDs excited by the ultraviolet, near- ultraviolet and blue chips.更多还原