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半导体激光器AuSn焊料烧结工艺优化与器件特性评价

Technics Optimization and Characteristics Valuation of AuSn Solder Sintering on Semiconductor Laser

【作者】 徐扬

【导师】 高欣;

【作者基本信息】 长春理工大学 , 光学工程, 2011, 硕士

【摘要】 应用In等软焊料焊装的高功率半导体激光器及其阵列,通常具有焊料易蔓延、电迁移及抗疲劳性差的缺点。器件长时间工作后,电极中Au原子可能会渗入In焊层中导致其受污染失效,严重影响了器件的工作性能和寿命。本文将从高功率半导体激光器的热特性分析入手,在ANSYS软件有限元分析和制备半导体激光器AuSn焊料两方面展开。针对实验室已有的808nm半导体激光器材料和结构特点,进行了半导体激光器的AuSn焊料制备及工艺试验。主要内容有:1)利用ANSYS软件,对808nm半导体激光器的焊装方式、不同焊料焊装的器件内部温度场分布进行了有限元分析,并对结果加以讨论;2)采用AlN基片作为激光器管芯与无氧铜热沉之间过渡热沉,在其上进行金锡焊料的制备。实验室自行搭建电镀平台并配置了新型的无氰电镀液,试验探索了此溶液条件下能达到电镀均匀平整厚Au最佳条件;3)使用磁控溅射和电镀结合热蒸发镀膜的方法,在AlN基片上制备AuSn焊料;探索大功率半导体激光器中AuSn合金作为焊层的烧结工艺并优化:4)将利用无氰电镀液制备的AuSn焊料与以往含氰电镀液制备出的AuSn焊料进行对比,提出了改进的方向。

【Abstract】 Creep and electrical movement of solder usually occurred in high power semiconductor lasers and linear-array semiconductor lasers packaged with soft solders such as In solder is relatively weak in enduring fatigue in device.Au electrode atoms into In solder layer may be caused its failure,after the device works long time,which would seriously influence the performance and lifetime of semiconductor laser.Study on the thermal characteristics of high power semiconductor lasers has been persent in this work. The finite element analysis software of ANSYS and AuSn alloy solders structures have been researched theoretically and experimentally in detail focused on 808nm semiconductor laser. Main works are summarized as the following. 1) Simulation temperature distribution within the finite element analysis of 808nm semiconductor laser welding by different methods and solder with ANSYS software,and discusse the result.2)We used the structure by AlN ceramic plate used as matching submount between laser chip and copper hear sink and AuSn alloy as solder. An acid electroplating solution of Au was prepared and the electroplating equipment was designed and set up based on our lab. The optimal conditions for uniform and smooth thick Au electroplating with acid solution were studied, qualified Au despositing layer was obtained,w hich was satisfied for device bonding.3)Multiple metal layers for device bonding were prepared and deposited onto AlN submount by magnetron sputter, electroplating and thermal evaporating process. The soldering process of AuSn alloys for device bonding was studied and the soldering condition was optimized.4) Compare the prepared non-cyanide plating solution AuSn solder with the prepared cyanide plating solution AuSn solder, direction of development of improved.

  • 【分类号】TN248.4
  • 【被引频次】3
  • 【下载频次】283
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