SOI制备中氧离子注入缺陷的控制与研究

【作者】 李逢祥；

【导师】 郑国祥； 曹雷俊；

【作者基本信息】 复旦大学 ， 材料工程， 2011， 硕士

【摘要】 绝缘材料上的硅(SOI:Silicon On Insulator)同体硅相比,具有降低功耗、提高集成密度、减少工艺步骤、可实现1V以下驱动和提高运行速度等优点。由于绝缘材料优异的隔离性能,速度可提高20-35%；拓宽了器件工作温度范围；有优异的抗辐照性能；还降低了电路的造价。SOI技术实现了“摩尔”图上的跳跃,突破了体硅及其集成电路的物理限制,将逐步取代体硅成为CMOS等的主流技术。作为SOI圆片的最成熟的制作方法---注氧隔离法(SIMOX),已经在生产中广泛的应用,其中最为关键的设备是大能量大剂量大束流氧离子注入机。SIMOX技术运用该种离子注入机进行注入工艺使的注入后的晶格缺陷增加,成为SOI圆片的最大的良率损失因素。本文着重研究了氧离子注入机在SIMOX技术中产生的缺陷,及其表征手段；通过工艺实验,控制注入的能量,剂量,束流和注入温度减少缺陷数量。并得出低剂量会导致明显的针孔缺陷、高能量也会导致针孔数量增多和低温注入缺陷多的实验结果,进而提出针对注入机的改进措施。通过论文工作对注入温度,能量,剂量,束流的合理设置,已经应用于MOS功率器件的制造工艺,并被运用在公司的规模化生产中,取得良好的芯片良率和经济效益。更多还原

【Abstract】 Compared to bulk silicon, SOI(Silicon On Insulator) technology supplies better performance by increasing processing speed, reducing the amount of power, improving reliability and permitting smaller packaging size. The inherent operating advantages of SOI based IC s apply to a wide range of products across a broad base of industries such as a full range of competers, servers and workstations, networks, portable battery powered products, harsh environment systems and other applications where o-equipment must perform reliably.SOI achieves a two-year performance gain over conventional bulk silicon technology, causes a jump in the performance roadmap and compensates for some of the expected loss of bulk technology performance improvement on the chart of Moore’s Law. It is becoming as a mainstream chip-making technique and the new silicon-based integrated circuits technology in 21century.As the best method of manufacturing SOI wafer---SIMOX technology have been applied widely at present, and the rule key tool is oxygen implanter which have the ability about high energy, high dose, big beam current.The crystal defect after implantation become the maximal yield loss when SIMOX technology adopt with oxygen implantation. So the article give emphasis to study the production theory of implanted crystal defect, and how to control the defects with the different condition with energy, dose, beam current and temperature. And found the result that more pinhole defect at lower dose (within critical dose), a little more pinhole defect at higher energy and more pinhole at lower temperature of wafer when implanting, provide some improvement action of implanter setting and process control according split experiment.The reasonable implantation condition have been applied to the big scale production, and get a bigger improvement than before at yield.更多还原