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微波宽带功率放大器的研究

【作者】 孙靖虎

【导师】 羊恺;

【作者基本信息】 电子科技大学 , 电路与系统, 2011, 硕士

【摘要】 在军事领域,随着近年来雷达技术的飞速发展,许多新体制雷达不断出现,如多波束雷达、有源相控阵雷达、雷达‐电子战‐通信一体化雷达等,他们对微波固态功率放大器提出了更大输出功率、更宽宽带、更高线性、更高效率、更高功率增益等等需求,微波宽带功率放大器作为系统的核心部件,其性能好坏将影响整个雷达通信系统的性能;在民用领域,宽带技术也具有相当大的市场前景,宽带微波通信技术的高隐蔽性、高处理增益、高多径分辨能力、高传输速率、大空间容量、强穿透能力、便于多功能一体化的特点将带来一个全新的产业,大大增加了宽带微波功率放大器研究的需求。目前国内微波宽带功率放大器的设计还处于起步阶段。本课题就是在这种日益增长的需求下提出的,旨在研制一种S波段(1800MHz~4200MHz)宽带微波功率放大器。为了设计频率为1800MHz~4200MHz的大功率、高效率、高增益的宽带微波功率放大器,本文采用理论分析与微波电路仿真软件相结合的方法,对宽带功率放大器的电路拓扑结构、阻抗匹配网络设计方法以及宽带3dB耦合器设计等方面展开了广泛而深入的研究,探索宽带功率放大器的设计方法。最终采用平衡式放大器结构,设计出了一款基于GaN基的S波段宽带微波功率放大器电路系统,包括3dB Lange耦合器设计,驱动级放大器和末级功率放大器的设计。本文所设计的宽带微波功率放大器电路最终测试结果如下:最高输出功率达到8W,P1dB功率达到3W,增益平坦度为±1.1dB,输入驻波比小于2,输出驻波比小于1.2,3GHz处的二次谐波抑制超过40dBm,功率效率为31%,其性能基本达到设计要求,最终的测试结果与仿真设计结果基本吻合。

【Abstract】 In the military field, with the rapid development of radar technology in recent years, many new system of radar are emerging, such as multi-beam radar, active phased array radar, radar-electronic warfare-communication integrated radar, etc. They raised more demand to microwave solid state power amplifier, such as high output power, wide bandwidth, high linearity, high efficiency, and high gain. As a core component of the system, its performance will affect the whole performance of the radar communication system. In civilian areas, wideband technology also has considerable market potential; its characteristics of high concealment, high processing gain, high multipath resolution capability, high transfer rate, large space capacity, strong penetrating power and easy integration of multi-functional will bring a new industry and this greatly increased the demand for microwave power amplifier research. At present, wideband microwave power amplifier design still in its infancy. The issue is raised under this growing demand, and aims to develop a S-band (1.8~4.2GHz) microwave power amplifiers.In order to design the 1.8~4.2GHz ultra band power amplifier, through theoretical analysis and microwave circuit simulation software, as broad and in-depth study in wideband power amplifier on circuit topology , impedance matching network and 3dB coupler design method. Finally, designed a S-band GaN-based ultra-broadband power amplifier system with balanced amplifier structure, including 3dB Lange coupler, the driver stage amplifier and the final stage power amplifier.This amplifier circuit is designed as the final test results: the maximum output power is 8W, P1dB is 3W, gain flatness is±1.1dB, input VSWR less than 2, output VSWR is less than 1.2, the second harmonic suppression is more than 40dBm at 3GHz, the PAE is 31%, the better performance meet the design requirements, the test results and simulation results are basically consistent.

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