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电弧离子镀过程中脉冲偏压对TiCN薄膜的影响

Effects of Pulse Bias on TiCN Coating in Arc Ion Plating

【作者】 张凇铭

【导师】 冯克成;

【作者基本信息】 长春理工大学 , 物理电子学, 2010, 硕士

【摘要】 在本文中,我们利用真空阴极弧沉积技术对TiCN薄膜进行了制备与研究。利用高纯的钛靶放电制备了TiCN薄膜,重点分析了偏压对薄膜的组织结构、机械性能及电化学性能的影响。研究基体负偏压在沉积多层薄膜中所起的作用。研究结果表明,随着偏压的增大表面形貌中的大颗粒数量减少,薄膜质量得到改善,通过观察薄膜的断面形貌发现随着偏压增大,薄膜中的柱状晶逐步得到细化、致密度提高。随着偏压的增加,镀层中的氮化物增加,镀层硬度的增加提高了其耐磨性能,而偏压继续增加,镀层的耐磨损性能又在下降。薄膜的耐腐蚀性能并不随着偏压的增加而升高,反而降低。

【Abstract】 In this dissertation, the TiCN film was deposited by cathodic vacuum arc (CVA) technique.Ticn films were prepared via discharge of high-purity Ti in Ar, N2 and C2H2 background. The dependence of microstructure, mechanical properties, and electrochemical properties on the different substrate bias was studied.It shows that as the substrate bias is going up, the film represent good qualities. The wear resistance can be improved but continue increase the film get a pool wear resistance. Corrosion resistance of thin film does not end with the increasing of bias, but lower.

【关键词】 真空阴极弧薄膜偏压TiCN
【Key words】 cathodic vacuum arcfilmBiasTiCN
  • 【分类号】O484.4
  • 【下载频次】124
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