【摘要】 在重掺硅衬底片背封过程中,硅片表面颗粒的尺寸和数量将会极大的影响到沉积薄膜的质量,并影响硅片几何特征的形成。主要针对不同掺杂剂的200 mm重掺衬底硅片在进行常压化学气相沉积（atmospheric-pressure chemical vapor deposition, APCVD）生长SiO₂薄膜前的颗粒沾污开展研究。将经过相同清洗及干燥工艺处理的硅片放置于有风机过滤机组（fan filter unit, FFU）存在的百级环境中,利用表面激光扫描方法对硅片表面粒径在0.3～0.5μm范围的颗粒进行测试,分析重掺衬底硅片表面颗粒随存放时间的增长情况。结果表明:在有FFU存在的百级环境中,随存放时间的延长:（1）同种掺杂剂硅片表面颗粒呈增长趋势,且粒径小的颗粒增长幅度较大;（2）不同掺杂剂硅片中,相比于重掺As, Sb的硅片,重掺B硅片表面颗粒的增长速度最快,而其他两种掺杂剂硅片表面颗粒增长速度相对较缓且差别不大。更多还原

【Abstract】 In the back-seal process of the heavily doped silicon wafers, the size and amount of particles on the surface had a great influence on the quality of the deposited films and the geometry formation of the silicon wafer. The particle contamination of 200 mm heavily doped silicon wafers with different dopants before the SiO₂ film growth under the condition of atmospheric-pressure chemical vapor deposition（APCVD） was studied. After the same cleaning and drying process, the silicon wafers were placed in class 100 environment with a fan filter unit（FFU）, and then surface particles with size in rage of 0.3～0.5 μm were tested by surface laser scanning and the effects of storage time on the amounts of surface particles on heavily doped silicon wafers were analyzed. The results showed under class 100 environment where a FFU existed, with the prolonging of storage time:（1） the particles on the surface of silicon wafers with the same dopant showed an increasing trend, particularly the smaller ones increasing more quickly;（2） in the silicon wafers with different dopants, compared to the heavily As doped and the heavily Sb doped silicon wafers, the surface particles on the heavily B doped silicon wafers increased the fastest, while the growth rate of the surface particles of the other two dopants silicon wafers was relatively slow and the difference was not significant.更多还原