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层状热电材料SrAl2Ge2的制备与性质研究

Investigation on the preparation and thermoelectric properties of layered SrAl2Ge2

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【作者】 史晓曼陈龙庆何欢孙奕翔曾珠唐军

【Author】 SHI Xiao-Man;CHEN Long-Qing;HE Huan;SUN Yi-Xiang;ZENG Zhu;TANG Jun;Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University;Data & Information Room, Military Region of Sichuan Province;

【通讯作者】 唐军;

【机构】 四川大学原子核科学技术研究所教育部辐射物理与技术重点实验室四川省军区数据信息室

【摘要】 以Ⅱ、Ⅲ和Ⅳ族元素为主的笼状物热电材料研究近年来发展迅速,尤其是在优值系数ZT值上取得了重大突破,而从Sr-Al-Ge笼状物体系中获得的层状结构热电材料却鲜有人关注.本研究利用铝元素作为助溶剂,在1150℃下成功合成了层状SrAl2Ge2单晶.采用X射线衍射仪对样品粉末进行表征,通过Rietveld精修证明该晶体具有CaAl2Si2结构(空间群为P3-m1,晶胞参数a=b=4.2339(1)?,c=7.4809(0)?).变温电阻率测试发现单晶样品沿c轴方向具有p型半导体行为,此外其在2~300 K低温下的比热(Cp)数据符合德拜模型.本研究结果对于开发新型无毒、高性能热电材料具有一定参考价值.

【Abstract】 Ⅱ,Ⅲ and Ⅳ groups were widely investigated to synthesize guest-host thermoelectric compounds in order to obtain high optimal ZT value materials. While a novel layered structure was less reported for Sr-Al-Ge system. In this study, SrAl2Ge2 single crystal was grown by aluminum flux at 1150 ℃ and characterized by powder X-ray methods. It is isotropic and crystallize in the CaAl2Si2-type structure through the Rietveld refinement method(space group P3-m1) with the lattice constants a=b=4.2339(1)?, c=7.4809(0) ?. Temperature-depended resistivity on single crystals along the c-axis shows p-type semiconducting behavior. Heat capacity(Cp) was measured in 2~300 K and low temperature Cp was consistent with data calculated by using Debye model. This work opens up a novel avenue for seeking and designing environment-friendly and high-performance thermoelectric materials.

【基金】 国家自然科学基金(11274234)
  • 【文献出处】 四川大学学报(自然科学版) ,Journal of Sichuan University(Natural Science Edition) , 编辑部邮箱 ,2019年05期
  • 【分类号】O614.232;TB34
  • 【网络出版时间】2019-09-20 11:55
  • 【下载频次】231
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