【作者】 陈艳伟；

【导师】 王成； 刘益春；

【作者基本信息】 中国科学院研究生院（长春光学精密机械与物理研究所） ， 凝聚态物理， 2006， 博士

【摘要】 ZnO一维纳米材料因其优异的光电性质成为当前ZnO材料研究中的热点之一。本论文利用水相合成和sol-gel方法制备出高质量ZnO、ZnO:In纳米棒及其阵列结构，并对ZnO和ZnO:In纳米棒的结构和光电性质进行了研究。对ZnO基异质结型光伏器件做了初步的探索，具体研究内容如下： （1）利用水相合成方法，无催化低温生长ZnO和铟掺杂ZnO一维纳米结构。通过多种表征手段研究样品的结构和光学性质。ZnO和ZnO:In样品具有六角纤锌矿结构，In的掺入使ZnO晶格常数增大，晶格对称性降低。ZnO纳米棒具有强紫外发射带，而深能级缺陷发光较弱。适量的铟掺杂引起ZnO晶体光学吸收带隙展宽，紫外发光蓝移而且强度显著降低。这种现象更有利于其光电流的产生。在变温PL光谱中，ZnO和ZnO:In晶体的紫外发射积分强度出现反常的负热淬灭现象，研究了这种非单调的温度依赖现象产生机理。 （2）制备了ZnO:In纳米棒／SiO₂／n-Si异质结构光伏器件，对其光电转换性能和光伏响应能力进行了研究。In掺杂ZnO样品具有强而宽的紫外表面光电压响应带，根据吸收光谱确定了其谱带来源。ZnO:In纳米棒／SiO₂／n-Si异质结构具有来自于异质结的良好整流特性，低的开关电压和高反向截止电压。光伏器件在紫外及可见区光谱范围内有强光电流响应，由光伏响应谱得到了开路电压和短路电流。通过改变前驱体反应浓度和掺杂比例等方法，优化实验条件，提高了器件的特性参数。 （3）用水相合成方法自组装制备有序排列的ZnO:In纳米棒阵列结构材料，研究了In掺杂对ZnO纳米棒阵列电子结构和光学性质的影响。自组装ZnO纳米棒阵列结构材料，研究了它的结构和光学性质，以及模板对ZnO纳米棒生长、形貌的影响。扫描电子显微镜观察到高度取向的纳米棒阵列结构，选区电子衍射照更多还原

【Abstract】 One-dimensional ZnO nanostructures are one of the present research hotspots in ZnO materials, due to their excellent optical and electrical properties. In this thesis, we investigate the structural, optical and electronic properties of self-assembled zinc oxide （ZnO） and indium doping zinc oxide （ZnO:In） nanorods and array nanostructures synthesized without catalyst in aqueous solution. We also explore the properties of ZnO:In heterojunction photovoltaic devices. The details are as follows:（1） One-dimensional ZnO and ZnO:In nanostructures were synthesized without catalyst in aqueous solution. XRD and Raman spectra demenstrated the formation of typical hexagonal wurtzite structures, and an increase of lattice constant after In doping. The PL spectra of ZnO showed a strong UV emission band, and a very weak visible emission associated with deep level defects. Indium incorporation induced the broadening of optical bandgap, blueshift of UV emission, and the quenching of the near-band-edge photoluminescence. This may be useful for photocurrent producing. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The mechanism of the negative thermal quenching was investigated.（2） The ZnO:In nanorods/SiO₂/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response, the charge transfer properties were investigated. The photoelectric conversion properties of ZnO:In nanorods/SiO₂/n-Si heterostructure were investigated. ZnO:In/SiO₂/n-Si heterostructure showed a wide range photocurrent spectral response更多还原