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硅基光电子器件的性能研究

Study on the Performance of Silicon-based Optoelectronic Devices

【作者】 魏玉欣

【导师】 江晓清;

【作者基本信息】 浙江大学 , 微电子与固体电子学, 2012, 博士

【摘要】 基于硅材料的光电子技术虽然发展历程不长,但近年来已经成为备受关注的新兴领域,被认为是未来实现光互连、光通信的重要发展方向。作为光电转换的关键器件硅基电光调制器是主要的研究器件之一,其啁啾、传输特性与速度等性能都是主要的系统表征参数。随着硅基光电子应用领域的不断扩展,向波长更长的红外波段延伸也成为了方兴未艾的探索领域。本文结合硅基光电器件的特点对硅基调制器的信号传输啁啾特性、系统测试表征以及红外波段的应用进行了研究,具体如下:1.提出了采用载流子色散效应的硅基调制器啁啾参数,从调制频率、调制幅度、吸收效应等方面对硅基MZI结构的调制器的啁啾特性做了较为详细的分析,阐述了调制过程中啁啾参数变化的规律。通过仿真证明在小信号和大信号两种调制方式下硅基MZI调制器与其他类型调制器的不同——其啁啾参数值为负,这正可以有效抵消传输时色散效应所引起的脉冲展宽、降低激光器直接调制带来的正啁啾效应。2.分析了微环和微环辅助MZI硅基光调制器的啁啾特性,指出啁啾同初始工作点相关,并总结了啁啾值的正负变化规律,提出了可以通过调整工作点实现“零啁啾”的方案。3.给出了调制器啁啾参数测量的方案,并结合实验室具体情况对调制器强度测试系统的高频测试能力进行了改善。利用两次CMOS工艺流片设计了行波电极,通过改进后高速测试的系统对器件的电学特性如S参数、眼图等进行了初步测量,总结了之后用于硅基器件电极设计、高速测量的关键问题。4.研究了在10.6μm长波红外波段的硅基undercut型波导器件,制定其工艺流程、分析光场特征、制备undercut型的1×2MMI功分器器件,通过搭建的红外测试平台进行了损耗测试和表征。本文的工作主要集中在硅基光电子器件性能的传输特性分析、系统测试改进、发展应用三个方面,希望能够为今后硅基光子学的研究做出有价值的贡献。

【Abstract】 Silicon photonics has raised intensive interests in recent years, as well as silicon based optical interconnection. Silicon photonics can benefit from sophisticated integrated circuit industry since it is compatible with complementary metal-oxide-semiconductor technology. As an important building block, ultra-speed silicon based modulators are essential due to the demand of optical integration. Thus its chirp characteristics, transmission and speed become main consideration. Along with the development of silicon photonics, application under long-wave infrared wavelength has attached much more attention, either.Combining the theory of silicon photonics, we have analyzed the chirp characteristics, performance of the experimental system, long-wave infrared undercut waveguide application in the following four aspects:1Chirp characteristics of silicon Mach-Zehnder Interferometer modulators with forward-biased PIN and reverse-biased PN structures are investigated by performing small-signal and large-signal simulation, respectively. Simulation result shows that chirp parameter is negative and influenced by the carrier absorption effect, the amplitude, and the frequency of applied signal. Negative chirp is essential to facilitate long-haul and high data rate transmission and able to achieve high quality modulation fro silicon photonic networks on chip.2Chirp characteristics of micro-ring based silicon modulators and ring-assisted MZI modulators are also fully analyzed. The chirp parameter can be tuned by choosing different operation point. A way to achieve zero-chirp is also proposed.3Due to the complexity of coherent detection, experiment setup associated with high-speed silicon modulators are proposed and built. In order to realize ultra-speed modulator, traveling-wave electrodes are designed and utilized during the silicon chip tapeout.4The undercut long-wave infrared waveguide components with air-gap beneath are analyzed and fabricated on the silicon wafer with simple manufacturing process. A1×2MMI splitter based on this structure is presented and measured under the10.6μm wavelength experimental setup. Applications of wireless sensor networks utilizing silicon infrared photonics are put forward at last.The work of this thesis mostly focuses on the device performance analysis, experiment improvement and applications of silicon photonics. The thesis is intended to provide a guidance and reference for the following research of photonics technology.

  • 【网络出版投稿人】 浙江大学
  • 【网络出版年期】2012年 12期
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