【作者】 徐全国；

【导师】 张健；

【作者基本信息】 沈阳化工大学 ， 能源动力（专业学位）， 2023， 硕士

【摘要】 随着当今电子元器件的制造更加精密,对其基础材料铜箔的质量要求也越来越高,更加的轻薄。在用传统的工艺方法很难制造出超薄的铜箔,即使制备出来但在运输途径中铜箔会发生起皱等一些问题,现在人们创造出一种新的制作超薄铜箔的方法,用金属箔作为载体支撑,在金属箔上用电化学方法沉积出超薄铜箔。但在载体金属箔和超薄铜箔之间的接合面上会有剥离不稳定的现象,为了更好的使铜箔剥离开来,可在两者之间加入剥离层,通过剥离层来调节金属箔和铜箔之间的结合情况,以能更好的把铜箔从金属箔上剥离,如今对于剥离层的选取及其制备工艺也是非常重要且有意义的。该论文用真空磁控溅射的方法来制备剥离层,用粗糙度是0.12的铜箔为载体箔,在铜箔基底上用磁控溅射的方法沉积Ni/Cr,Ni/Co,Ni/Ti这3种金属复合薄膜,其中Ni层的制备工艺一样,主要用来当粘结层的,对于铬、钴和钛层的制备是在不同溅射气压的工艺下探究金属薄膜与铜膜的结合力情况,用达因笔、四探针和万能拉力仪进行表征,来选出能合适的作为剥离层薄膜材料并根据工艺方法对结合力调控,文中进一步研究了在不同溅射功率、沉积温度和靶基距下的铬薄膜表面形貌、电阻性能和铬与铜膜结合力的变化。实验结果表明:溅射气压对铜箔上薄膜的表面能、结合力和方阻均有影响。随着溅射气压的增大,铬薄膜的表面能先减小后增大直到气压0.8Pa时不再变化,钴薄膜的表面能先增大后减小,两种薄膜的表面能变化趋势都在气压0.5Pa时发生转折,钛薄膜的表面能一直保持不变。铬、钴、钛3种薄膜与铜膜的结合力在0.5Pa时达到最大值,之后结合力开始降低,其中铬薄膜的结合力在3到4N/mm2范围内,作为剥离层最为合适。当溅射气压为0.8Pa时,铬、钴、钛薄膜的方阻均达到最小值,铬薄膜整体的方块电阻在3者中是最小的,则铬薄膜的导电性能最为优良。随着沉积温度的升高,铬薄膜的的晶粒生长越来越好,薄膜的方块电阻呈减小趋势,铬与铜膜的结合力呈现先减小后增大趋势。在靶基距120mm时,薄膜的晶粒生长的最好,晶粒间较紧密;在靶基距100mm时,薄膜上有较大空洞产生。薄膜的方阻随着靶基距的增大呈增大趋势,铬与铜膜的结合力先减小后增大最后在减小。在溅射功率达到90W时,沉积到基底表面的铬原子数量最多,随着溅射功率的增大,铬薄膜的方阻逐渐减小,铬与铜膜的结合力逐渐增大。更多还原

【Abstract】 With the more precise manufacturing of electronic components nowadays,the quality requirements for their basic material copper foil are also increasing,becoming lighter and thinner.It is difficult to produce ultra-thin copper foil using traditional process methods.Even if prepared,the copper foil may wrinkle during transportation.Now,people have created a new method for producing ultra-thin copper foil,which uses metal foil as a support and deposits ultra-thin copper foil on the metal foil using electrochemical methods.But the phenomenon of unstable peeling on the joint surface between the carrier metal foil and ultra-thin copper foil.In order to better peel off the copper foil,a peeling layer is now added between the two,and the bonding between the metal foil and copper foil is adjusted through the peeling layer to better peel off the copper foil from the metal foil.Nowadays,the selection and preparation process of the peeling layer are also very important and meaningful.In this thesis,the vacuum Magnetron sputtering method is used to prepare the stripping layer.The copper foil with a roughness of 0.12 is used as the carrier foil,and the Magnetron sputtering method is used to deposit three kinds of metal composite films,namely Ni/Cr,Ni/Co,and Ni/Ti,on the copper foil substrate.The preparation process of the Ni layer is the same,Mainly used as a bonding layer,the preparation of chromium,cobalt,and titanium layers is to explore the bonding force between metal films and copper films under different sputtering pressure processes.Characterization is carried out using a dyne pen,four probes,and a universal tensile tester to select suitable materials for the stripping layer film and adjust the bonding force according to the process method,The thesis further investigated the changes in surface morphology,electrical resistance,and adhesion between chromium and copper films under different sputtering powers,deposition temperatures,and target substrate distances.The experimental results indicate that:The sputtering pressure has an impact on the surface energy,adhesion,and square resistance of the thin film on copper foil.As the sputtering pressure increases,the surface energy of the chromium film first decreases and then increases until it no longer changes at a pressure of 0.8Pa.The surface energy of the cobalt film first increases and then decreases.The trend of surface energy changes for both films turns at a pressure of 0.5Pa,while the surface energy of the titanium film remains unchanged.The binding force between chromium,cobalt,and titanium thin films and copper film reaches its maximum at 0.5Pa,and then begins to decrease.Among them,the binding force of chromium thin film is in the range of 3 to 4N/mm2,making it the most suitable stripping layer.When the sputtering pressure is 0.8Pa,the square resistance of chromium,cobalt,and titanium films reaches the minimum value,and the overall square resistance of chromium films is the smallest among the three,indicating that the conductivity of chromium films is the best.As the deposition temperature increases,the grain growth of the chromium film becomes better and better,and the square resistance of the film decreases.The binding force between chromium and copper film first decreases and then increases.When the distance between the target and substrate is 120 mm,the grain growth of the thin film is the best,and the grain spacing is relatively tight;When the target base distance is 100 mm,there are large voids generated on the film.The square resistance of the thin film increases with the increase of target to substrate distance,and the binding force between chromium and copper film first decreases,then increases,and finally decreases.When the sputtering power reaches 90 W,the number of chromium atoms deposited on the substrate surface is the highest.As the sputtering power increases,the square resistance of the chromium film gradually decreases,and the binding force between chromium and copper film gradually increases.更多还原