【摘要】 为了制备垂直排列长径比高的ZnO纳米线,首先采用脉冲激光沉积法(PLD)在不同温度的掺锡氧化铟(ITO)透明导电玻璃衬底上制备一层ZnO种子层,然后用化学浴沉积法(CBD)在已制备了种子层的衬底上生长ZnO纳米线,同时系统地研究了不同生长条件对ZnO纳米线生长行为的影响,并使用扫描电子显微镜和原子力显微镜对其形貌、生长特征等进行了测试和表征。结果表明,在衬底温度为200℃的ITO衬底上沉积的ZnO种子层具有良好的结晶性。当生长时间为9 h,水浴温度为95℃,聚乙烯亚胺(PEI)浓度为4. 5 mmol/L时,通过CBD法生长的ZnO纳米线呈六角形状垂直排列于具有种子层的ITO基片上,长径比高达20. 56。更多还原

【Abstract】 In order to prepare vertically aligned ZnO nanowires with high aspect ratio,ZnO seed layers were deposited on ITO transparent conductive glass substrate with different temperature,which were used to synthesize the ZnO nanowires by chemical bath deposition(CBD) method. The synthesized condition were systematically investigated. The morphology and growth behavior of Zn O seed layers and nanowires were characterized by scanning electron microscopy and atomic force microscopy. The results show that ZnO seed layer deposited on ITO substrate with 200 ℃,exhibited excellent crystallinity. Furthermore, on the above mentioned substrate, and the water bath temperature was fixed at 95 ℃,the Polyethylenimine(PEI) were carried out at 4. 5 mmol/L and thegrowth time was 9 h,the obtained ZnO nanowires were vertically grown on ITO substrate with a hexagonal configuration and presented a well array with a high aspect ratio of 20. 56.更多还原