节点文献
采用MEMS技术制造硅磁敏三极管
Silicon megnetotran sistor by MEMS technology silicon transistor
【摘要】 阐述了采用MEMS技术与反外延技术相结合在硅片表面制造具有矩形板状立体结构的硅磁敏三极管的设计原理、结构和工艺。结果表明 ,设计的硅磁敏三极管制造技术不但能与IC工艺相兼容 ,而且便于集成化 ,将有广泛的应用领域。
【Abstract】 Adopt MEMS techniques and turn- extensing techniques make magnetic-sensitive silicon transistor in the face of the silicon is introduced,the magnetic-sensitive silicon transistor has rectangular structure.The design principle,device structure and technology are also introduced .The result shown technology of the sensor array is using silicon micromachining technology combined with semiconductor IC process and easy to integrated circuit block.The device will have a vast new world of application and dissemination.
【关键词】 MEMS技术;
反外延技术;
硅磁敏三极管;
【Key words】 MEMS techniques; turn-extensing techniques; magnetic-sensitive silicon transistor;
【Key words】 MEMS techniques; turn-extensing techniques; magnetic-sensitive silicon transistor;
【基金】 国家自然科学基金资助项目! (60 0 760 2 7)
- 【文献出处】 传感器技术 ,Journal of Transducer Technology , 编辑部邮箱 ,2001年05期
- 【分类号】TN32
- 【被引频次】17
- 【下载频次】204