节点文献

基于GaN的宽带Doherty功率放大器设计

Design of Broadband Doherty Power Amplifier Based on GaN

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 葛国语刘宇希

【Author】 GE Guo-yu;LIU Yu-xi;Faculty of Electrical Engineering and Computer Science,Ningbo University;

【机构】 宁波大学信息科学与工程学院

【摘要】 带宽是Doherty功率放大器一个重要的性能指标,相比于单管的功率放大器,Doherty功率放大器存在更多的带宽限制因素。研究已经表明,后匹配结构可以有效的拓展Doherty功率放大器的带宽。本文相比于传统Doherty功放,将合路点处的阻抗值匹配到更靠近负载牵引处的阻抗值,在简化输出匹配结构的基础之上更能够有效的扩展Doherty功放的带宽。设计中采用安捷伦公司的先进设计系统软件(Advanced design system,ADS),选取Cree公司CGH40010F GaN HEMT晶体管。经过电路仿真和实物测试,结果表明该DPA在1.8-2.9 GHz频带内,饱和输出功率为42.3 dBm-44.4 dBm,饱和增益大于11 dB,饱和漏极效率60%-69%,输出功率回退6 dB时漏极效率42%-51%。

【Abstract】 Bandwidth is an important performance indicator of the Doherty power amplifier, Compared to a single-tube power amplifier,Doherty Power amplifier has more bandwidth-limiting factors.Studies have already shown that the rear matching structure can effectively expand the bandwidth of the Doherty power amplifier. This paper is compared with the traditional Doherty power amplifier,Match the impedance values at the junction to the impedance values closer to the load traction,On the basis of simplifying the output matching structure, it can expand the bandwidth of the Doherty power amplifier more effectively.Advanced design system software of Agilent is used in the design(Advanced design system,ADS),Select the Cree Company CGH40010F GaN HEMT transistor.After circuit simulation and physical test,The results indicate that this DPA is within the 1.8-2.9GHz band,The saturated output power is set at 42.3dBm-44.6dBm,Saturated gain was greater than 11dB,Saturated drain efficiency is 60%-69%,the drain efficiency is 42%-51% when the power is backed by6dB.

【关键词】 宽带功率放大器Doherty后匹配GaN
【Key words】 Broadband power amplifierDohertypost matchingGaN
【基金】 国家自然科学基金(U1809203);毫米波国家重点实验室开放课题(K202211)
  • 【文献出处】 无线通信技术 ,Wireless Communication Technology , 编辑部邮箱 ,2023年02期
  • 【分类号】TN722.75
  • 【下载频次】55
节点文献中: