【摘要】 采用高温固相法制备近紫外光激发的BaSr₂Si₃O₉∶Eu³⁺发光材料,研究了Eu3+不同掺杂量对样品晶体结构、发光特性的影响规律。用X射线衍射（XRD）、荧光光谱（PL）、紫外-可见光谱分析系统对样品进行了表征和封装评价。结果表明,随着Eu³⁺的掺入,BaSr₂Si₃O₉晶体结构并没有发生变化;激发主峰为395nm,发射主峰为611nm,随着Eu³⁺掺杂量的增加,样品发光强度先升高后降低,在掺杂量为6%（摩尔分数）时发射强度最大;结合396nm近紫外芯片和BAM双峰蓝色荧光材料进行封装测试,所制备白光LED显色指数为88,色温5953K,因此,BaSr₂Si₃O₉∶Eu³⁺是一种很有应用前景的近紫外激发发光材料。更多还原

【Abstract】 High-temperature solid-state reaction method was used to prepare BaSr₂Si₃O₉∶Eu³⁺which was excited by near UV.The effect of Eu³⁺ doped concentration on crystal structure and luminescence characteristic were researched.Samples were characterized by X-ray diffraction,fluorescence spectroscopy and UV-visible spectrum analysis system.The results showed that the crystal structure didn’t change with the incorporation of Eu3+.BaSr₂Si₃O₉∶Eu³⁺had the highest excitation peak at 395 nm and the strongest emission peak at 611 nm,with the increasing of Eu³⁺ amount,the luminous intensity first increased then decreased.The maximum emission intensity in the doping amount of 6mol%.Finally the sample was packaged with 395 nm near UV chip and BAM bimodal blue phosphor was introduced into a LED light source,CRI was 88 and CCT was 5953 K.Therefore,BaSr₂Si₃O₉∶Eu³⁺was a promising luminescent material used in near UV light.更多还原