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复合施主掺杂对(Ba,Pb)TiO3系半导体陶瓷的影响
The Effects of Different Doner-Doping on the(Ba,Pb)TiO3 Semiconductor Ceramics
【摘要】 通过固相法制备了施主掺杂的(Ba,Pb)TiO3半导体陶瓷,研究了掺杂对(Ba,Pb)TiO3陶瓷的物理性能、显微结构、电畴结构及半导化机理的影响。结果表明,掺加一定量的施主Sb3+,Nb5+及复合施主(Sb3+,Nb5+)均可以实现陶瓷的半导化,而且杂质种类的不同材料的显微结构、电畴结构及半导化机理也存在显著的差别,复合施主掺杂可以进一步降低材料的室温电阻率,并且制得结构致密、高耐压值的(Ba,Pb)TiO3陶瓷。结合不同施主掺杂对显微结构、电畴结构的影响及缺陷化学理论,对(Ba,Pb)TiO3陶瓷的半导化机理给出了定性的解释。
【Abstract】 (Ba,Pb)TiO3 semiconductor ceramic samples were synthesized by solid-phase reaction,and the effects of different donor-doping on the physical properties,microstructure,domain structures,and the semiconduction mechanism of the(Ba,Pb)TiO3 ceramics were discussed.The semi-conductive ceramics was obtained by donor-doping of Sb3+or Nb5+,or composite- donor-doping of(Sb3+,Nb5+),and their properties changed by the dope.The donor-doped composite exhibited a low room temperature resistivity,dense structure and high pressure endurance.The semiconduction mechanism of the ceramics was explained based on defect chemistry,and the role of the different donor-doping on the microstructure,domain structures of the materials.
【Key words】 (Ba,Pb)TiO3; microstructure; domain structures; semiconductor;
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2008年S1期
- 【分类号】TQ174.1
- 【被引频次】5
- 【下载频次】88