【摘要】 为了使GaAs微波功率FET更可靠地应用于重要微波系统，选取高可靠器件生产线生产的CS0531型器件进行加速寿命试验，并研制了专用试验设备。观察到器件n因子随着试验时间有增大的趋势，初始低频噪声值与器件突然烧毁有一定的相关性。这一结果表明低频噪声有可能成为未来评价GaAs器件可靠性的一种方法。该器件失效机构激活能2．45eV，为道温度110℃时，10年平均失效率4Fit，平均寿命75137×1011h。更多还原

【Abstract】 In order to obtain more reliable GaAs microwave power FETs applicable to important microwave systems, a special testing equipment has been developed, and an accelerated life-time testing has been carried out on CS053l GaAs power FET that manufactured in a high reliability GaAs device pilot production line. It has been observed that n factor of the device increases with the length of testing time, and abrupt burn-out of the device relates to the initial low frequency noise. The result implies that the low frequency noise can be a important parameter used to evaluate the GaAs device reliability. At 2. 45 eV of activated energy of the failure mechanism and 110℃ of channel temperature, the average failure rate and the MTTF of the device are 4 Fit per ten years and 7. 513 7 × 1011 h, respectively.更多还原