【作者】 贾淑涵；

【导师】 张永鸿；

【作者基本信息】 电子科技大学 ， 电子与通信工程（专业学位）， 2013， 硕士

【摘要】 毫米波开关在雷达、导航、测量、通信、电子对抗等领域中有着广泛的应用，其中PIN管控制开关具有结构简单、性能高、成本低等优点。研究毫米波PIN管开关具有重要意义。本文对W波段单刀单掷(SPST)开关和单刀双掷(SPDT)开关进行了理论和实验研究，选择在毫米波段损耗较低的鳍线作为传输线，采用鳍线与梁式引线PIN管并联的经典电路形式设计W波段开关。在设计过程中，对二极管阻抗进行匹配，减小了开关的插损，隔离度也很好地满足了指标的要求。并对W波段PIN开关的功率容量进行了理论分析及实验研究。为此完成了一系列研究工作：针对二极管的封装结构在W波段会对电路性能产生极大影响，论文首先对PIN二极管进行了理论分析，并根据二极管的理论知识及厂商提供的二极管结构图，在场仿真软件AnsoftHFSS中建立粗糙的二极管三维模型，来模拟二极管的封装参量对电路中场的影响。然后设计电路并加工测试，根据测试结果提取出二极管正偏和反偏状态下的阻抗参数。在此基础上，本文优化设计了W波段SPST开关。为尽可能降低开关的插损，SPST开关采用单管并联电路，且对二极管阻抗进行匹配，以减小不必要的反射损耗。仿真结果表明，此方法设计的SPST开关，不仅插损较小，且仅用一只二极管就能实现较高的隔离度。本文加工测试了两个开关，给出插损、隔离度、开关时间及功率容量的实测结果。测试结果表明，两个开关在中心点频率（94.5GHz）附近的插损均小于1.7dB，隔离均大于28dB，在10GHz带宽内，插损小于2dB，隔离大于20dB。开关的上升时间与下降时间均小于2ns。在“截止”状态下，占空比为1%的功率容量大于150W。两个开关的性能曲线无明显差距，一致性较好，且均与仿真结果基本吻合。通过总结SPST开关的经验，本文又研制了W波段SPDT开关。测试结果表明，开关在W波段的插损最小值为2dB，隔离最大值为40dB，在5GHz频率范围内，插入损耗小于3dB，隔离度大于20dB。开关的上升时间小于2.5ns，下降时间小于2ns。更多还原

【Abstract】 Millimeter-wave switch is extensively applied in the fields of radar, navigation,surveying, communications and electronic countermeasure. PIN switch has manyadvantages, such as simple structure, small size, high performance, low cost and so on, so itoccupies an extremely important role in the millimeter-wave switch. And it’s quitemeaningful to study PIN diode switch.The theoretical and experimental researches on the W-band single-pole single-throw(SPST) switch and single-pole double-throw (SPDT) switch have been finished. Fin linethat has lower loss in the millimeter waveband is chosen as the transmission line, and abeam lead PIN diode is connected in parallel to design W band switch. In this design, thediode’s impedance is matched to reduce insertion loss, and isolation also meets the index.At the same time, theoretical analysis and experimental study on the power capacity of theW-band PIN switch have been done in this thesis. A series of research work was completedfor this purpose.The package structure of diode has significant influences for performance of thecircuit. Firstly, the thesis analyzed PIN diode theoretically and then established a coarsethree-dimensional model in field simulation software Ansoft HFSS according to diode’stheory and structure drawing. The influence on the electric field of diode’s package can besimulated by this model. Then circuit is designed and processed to obtain test results,which are used to extract the parameters of the impedance of the diode on forward-biasedand reverse biased state.Based on this, W-band SPST switch is designed in this thesis. In order to minimize theinsertion loss, only one PIN diode is employed, and the diode’s impedance is matched toreduce unwanted reflections loss. Simulation results show that the switch not only haslower insertion loss, but also obtains high isolation with only one diode. Two switcheswere processed and measured, and the measurement results of insertion loss, isolation,switching time and power capacity were given in chapter3. It can be seen from themeasurement results that the two switches’ insertion loss are all less than1.7dB, and theisolation are all greater than28dB near the center frequency (94.5GHz). Insertion loss of less than2dB and isolation of greater than20dB are obtained over10GHz bandwidth.Switch’s rise time and fall time are all less than2ns. On the "off" state, the power capacityof the duty cycle of1%is greater than150W. Two switches have no significant differencein the performance curve, and the measurement results of two switches are all consistentwith the simulation results.By summing up the experience of the SPST switch, a SPDT switch with the samematching method is designed It can be seen from the measured results that the lowestinsertion loss is2dB, and the highest isolation is40dB at the W-band. Insertion loss of lessthan3dB and isolation of greater than20dB are obtained over5GHz bandwidth, Switch’srise time is less than2.5ns and fall time is less than2ns.更多还原