【摘要】 GaN高电子迁移率晶体管(HEMT)器件由于其宽禁带材料的独特性能,相比硅功率器件具有击穿场强高、导通电阻低、转换速度快等优势,在智能家电、交直流转换器、光伏逆变器以及电动汽车等领域有着广泛的应用前景。但GaN HEMT器件的高功率密度和高频工作特性,给器件封装带来了极大挑战,要使其出色性能得以充分发挥,其封装结构、材料、工艺等起着至关重要的作用。介绍了GaN HEMT及其组成的功率模块的典型封装结构,并对国内外在寄生电感、热管理等封装关键技术问题的研究现状,以及高导热二维材料石墨烯在GaN HEMT器件热管理中的应用进行了综述。更多还原

【Abstract】 Due to its unique performance of wide band gap material, GaN high electron mobility transistor(HEMT) has advantages such as high breakdown field strength, low on-resistance and fast switching speed compared with silicon power devices. GaN HEMT devices have a wide application prospect in intelligent home appliances, AC/DC converters, photovoltaic inverters and electric vehicles, etc. However, the high power density and high frequency working characteristics bring great challenges to the packaging of the devices. In order to achieve their excellent performance, the packaging structures, materials and process play a vital role. In this paper, typical package structures of GaN HEMT and their power modules are introduced. The global research status of key package technologies such as parasitic inductance, thermal management, and the application of high thermal conductivity two-dimensional material graphene in thermal management of GaN HEMT devices are reviewed.更多还原